| PART |
Description |
Maker |
| 10ERB20 |
FRD - 1A 200V 60ns
|
NIEC[Nihon Inter Electronics Corporation]
|
| 10DRA10 |
FRD - 1A 100V 60ns
|
NIEC[Nihon Inter Electronics Corporation]
|
| GSF05A20 |
FRD - Low Forward Voltage Drop 5 A, 200 V, SILICON, RECTIFIER DIODE
|
Nihon Inter Electronics, Corp.
|
| IRFM220B IRFM220BTFFP001 IRFM220BD84Z |
1.13 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET
200V N-Channel MOSFET
200V N-Channel B-FET / Substitute of IRFM220A
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
|
| FQT4N20L FQT4N20LTF |
200V N-Channel Logic Level QFET
200V LOGIC N-Channel MOSFET 0.85 A, 200 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| RURD420S RUR420 RURD420S9ANL |
4 A, 200 V, SILICON, RECTIFIER DIODE, TO-252
4A, 200V Ultrafast Diodes
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
|
| IRFD9220 FN2286 |
600 mA, 200 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
0.6A, 200V, 1.500 Ohm, P-Channel Power MOSFET
From old datasheet system
0.6A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET
|
Intersil Corporation
|
| BS108ZL1 BS108 BS108ZL1G BS108G |
Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N-Channel TO-92(250mA,200V,小信号，逻辑电平，N-沟道增强型MOS场效应管（TO-92封装
|
ONSEMI[ON Semiconductor]
|
| FQA65N20NL |
200V N-Channel QFET 65 A, 200 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
| M39014/22-0945 M39014/22-0944 |
CAP 15PF 200V 10% C0H DIP-2 TUBE-PAK S-MIL-PRF-39014/22 CAPACITOR, CERAMIC, MULTILAYER, 200 V, CH, 0.000015 uF, THROUGH HOLE MOUNT
CAP 15PF 200V 5% C0H DIP-2 TUBE-PAK S-MIL-PRF-39014/22 CAPACITOR, CERAMIC, MULTILAYER, 200 V, CH, 0.000015 uF, THROUGH HOLE MOUNT
|
AVX, Corp.
|
| IRF630 FN1578 RF1S630SM |
9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
9A/ 200V/ 0.400 Ohm/ N-Channel Power MOSFETs
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
|
